Mr. Wajahat Bin Jalal is the student of B. Tech - Electrical Engineering (2014-18 batch) of Mewar
University Rajasthan. He did his research Internship from Indian Institute of Technology, Bombay.
The details of his service as a Research Intern are given below
Position : Temp. Project Research Intern
Project Title : Electrolyte Gating of High Carrier Density Channel
Department : Physics Department
Stipend : Rs. 10000 per month
ABSTRACT
In IIT Bombay as a research intern, his work is based on the idea of research that has been done on
samples (Indium Nitride, Zinc Oxide) and Polymer electrolyte, in which Polymer electrolyte is used as
gate dielectric on the thin film channels of both the samples. The polymer electrolyte solution has
been prepared by solution casting technique, in which Lithium Perchlorate (LiCLO4) was taken as the
salt and poly ethylene oxide (PEO) was taken as the polymer host with wt% ratio of 1:8 respectively.
Main motive of our work is to make a gate on high density thin film channels of Indium Nitride and
Zinc Oxide by using Polymer electrolyte and look at their low temperature properties. The results
show the behavior of Polymer electrolyte at lower temperature (80k) (charge state can be frozen by
reducing the temperature), the electrical characteristics (output and transfer characteristics) of thin
film devices and effect of Polymer electrolyte as a gate dielectric on thin film channels of Indium
Nitride and Zinc Oxide at room temperature. The report also enlightens the various techniques used
to fabricate the devices and preparation of polymer electrolyte.
Electrolytic Gating of High Carrier Density Thin Film Channel of InN and ZnO